power amplifier GaAs

GaAs technologies have seen broad acceptance for
low power (<1W), cellular handset RF power amplifier applications. RF high power GaAs (>10W) has, until
recently, been used mainly for military, peripheral and
niche market places. With the advent of 3G cellular
communications, RF high power GaAs technologies are
beginning to enter the mainstream of the wireless
communications markets. Up to now, the RF linear
power amplifier technology of choice has been a siliconbase
FET technology, LDMOS (Laterally Diffused Metal
Oxide Semiconductor). Will RF high power GaAs
become a major player in the mainstream, high-volume
markets? What effect will GaAs have on the future of
communications infrastructure technology? Recent
improvements in the efficiency of RF high power GaAs
and state-of-the-art linearity attributes of LDMOS
makes this race “too close to call”.

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